(5/5) based on 12 customer reviews
Description
div id=gcsContainer> Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (8-pin SO). Fairchild FDS6670A. R1, R2. 2. 0.007 1%, 1/2W resistors (2010). IRC LR2010-01- R0007-F Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6612A . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 100 pF. 1. D1,D2. BAT54WT1. 2. L1. 4.6 H. 1. L2. 3.2 H. 1. Q2. FDS6984S. 1. Q3. FDS6612A . 1. Q10. FDS6680S. 1. R1,R3,R5,R13,R17. Open. 5. R2,R4,R15. L2. 1. 4 H, 6.2A power inductor. Sumida CDEP105(S)-4R0. N1, N3. 2 n-channel MOSFETs (SO8). Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (SO8). DESCRIPTION. L1, L2. 2. 5.8 H, 8.6A, 16.2m inductors. Sumida CDRH127/LD- 5R8NC. N1, N3. 2. 8.4A, 30V n-channel MOSFETs, SO-8. Fairchild FDS6612A .
| Part Number | FDS6612A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 8.4A 8-SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 8.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
FDS6612A
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Finestock Electronics HK Limited
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HK HEQING ELECTRONICS LIMITED
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TIANHAO INDUSTRIAL CO., LIMITED
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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Nosin (HK) Electronics Co.
