(4/5) based on 11 customer reviews
Description
Q1: Fairchild Semiconductor FDR6674A . L1: Vishay IHLP-5050CE. C2: Sanyo 6TPC100M. 2 3 6 7. 2. 5. 1 F. C1. 47 F. Figure 24. Application Circuit, 12 V to Transistor, MOSFET, Nch, 11.5A, 30V 9.5 millohm. 0.160 x 0.130 Fairchild. FDR6674A . 5. R1, R4, R7, R10,. R12. Resistor, Chip, 10.0k-Ohms, 1/16-W, 1%. 603. For this design, a Fairchild FDR6674A 30-V n-channel MOSFET is used as the low-side FET. This particular FET is designed specifically to be used as a FDR6674A . NMOS. 0.23. 9.5. 11.5. Fairchild. FDR840P. PMOS. 0.6. 1.0. 3.3. 12. 10. Fairchild. *Recommend transistors in typical application circuit Figure 1.
| Part Number | FDR6674A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 11.5A SSOT-8 |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT,8 |
| Package / Case | 8-SMD, Gull Wing |
| Image |  |
FDR6674A
ONSEMICON
1000
1.18
MY Group (Asia) Limited
FDR6674A
ON/ST
16328
1.9375
SHENZHEN NEW ENERGY ELECTRONIC TECH.,LIMITED
FDR6674A
ON/CMD
10000
2.695
KK Wisdom Limited
FDR6674A
ON/SANYO
6821
3.4525
MASSTOCK ELECTRONICS LIMITED
FDR6674A
ONSEM
55289
4.21
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
