(4/5) based on 4 customer reviews
Description
DATASHEET MOSFET Maximum Ratings TC = 25oC unless otherwise noted*. Thermal Characteristics. Symbol. Parameter. FDP8N50NZ FDPF8N50NZ . Unit. VDSS. Drain to Jul 12, 2016 FDPF8N50NZ . TO220F-3. (DAP_CuAlBW)(G). Jul 12, 2016. 1.0. FSSZ. 2.108682 g. Each. Manufacturing Process Information. Terminal Finish. Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDPF8N50NZ . TO220F-3 (DAP_CuAlBW)(G). FSSZ. capacitance characteristics of a conventional planar. MOSFET, FQPF9N50C, and the UniFET II MOSFET,. FDPF8N50NZ , respectively. Under the same RDS(on),. Semiconductor. Fairchild Semiconductor. IPA50R950CE. CS8N50F A9R. SVF840F. MDF7N50BTH. FDPF8N50NZ . IPA50R800CE. STF8NM50N. AOTF8T50P.
| Part Number | FDPF8N50NZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 500V 8A TO220F |
| Series | UniFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 735pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
FDPF8N50NZ
ONSEMICON
559
1.1
C&Z Electronic Hongkong Co., Limited
FDPF8N50NZ
ON/ST
16000
2.1225
Finestock Electronics HK Limited
FDPF8N50NZ
ON/CMD
155
3.145
WIN AND WIN ELECTRONICS LIMITED
FDPF8N50NZ (S)
ON/SANYO
12000
4.1675
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDPF8N50NZ
ONSEM
200000
5.19
Shenzhen WTX Capacitor Co., Ltd.
