Part Number | FDP65N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 65A TO-220 |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2170pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 135W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 32.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FDP65N06
ONSEMICON
8827
0.25
MASSTOCK ELECTRONICS LIMITED
FDP65N06
ON/ST
8137
1.13
Shenzhen guangsenmei Technology Development Co., Ltd
FDP65N06
ON/CMD
6429
2.01
WIN AND WIN ELECTRONICS LIMITED
FDP65N06
ON/SANYO
4944
2.89
Shenzhen WTX Capacitor Co., Ltd.
FDP65N06
ONSEM
3855
3.77
Cicotex Electronics (HK) Limited