Part Number | FDP52N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 52A TO-220 |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Rds On (Max) @ Id, Vgs | 49 mOhm @ 26A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FDP52N20
ONSEMICON
7375
1.7
KYO Inc.
FDP52N20
ON/ST
8007
2.8925
Belt (HK) Electronics Co
FDP52N20
ON/CMD
474
4.085
Cicotex Electronics (HK) Limited
FDP52N20
ON/SANYO
2232
5.2775
Yingxinyuan INT'L (Group) Limited
FDP52N20
ONSEM
4411
6.47
CIS Ltd (CHECK IC SOLUTION LIMITED)