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Description
Datasheet Nov 1, 2013 G. S. D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDP090N10 . Unit. VDSS. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FDP090N10 . FDP090N10 . TO-220 -3 (92.5-5-2.5DA_AlBW). (G). INTERNAL SUZHOU. 2.030182. Aug 8, 2014 FDP090N10 . TO-220-3. (92.5-5-2.5DA_AlBW) (G). SUZHOU. INTERNAL. SUZHOU. 2.0301822. Not. Applicable. Terminal. Finish. Base Alloy. Jan 24, 2013 MOSFET. RLPC1. 330 k . 1/8 W. Q1. FCPF11N60. RLPC2. 13 k . 1/8 W. Q2. FDPF15N65. RRES1. 36 k . 1/8 W. Q3. FDP090N10 . RRES2. FdP090n10 . 100. 20. 9. 89. 22. tO-220. FdP100n10. 100. 20. 10. 76. 20. tO- 220. FdP120n10. 100. 20. 12. 66. 20. tO-220. FdP150n10. 100. 20. 15. 53. 15.
| Part Number | FDP090N10 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 100V 75A TO-220 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8225pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FDP090N10
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HK HEQING ELECTRONICS LIMITED
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