(5/5) based on 17 customer reviews
Description
Oct 1, 2013 FDP050AN06A0 / FDB050AN06A0 Rev. C2 www.fairchildsemi.com. 1. FDP050AN06A0 / FDB050AN06A0. Features. Formerly developmental Jan 8, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP050AN06A0 . FDP050AN06A0 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 8, 2016 FDP050AN06A0 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. FSSZ. 2.030183. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Jan 4, 2012 Anyone. RDK-BLKJAG-D. International. Rectifier. IRFB3206PBF. Fairchild. FDP038AN06A0. Fairchild. FDP050AN06A0 . Capacitor, 0.1uF 50V, certainly within the UIS ratings for previous pulses which occurred at a lower junction temper- ature.[2]. Figure 3. UIS Capability, FDP050AN06A0 . 0.01. 0.1. 1. 10.
| Part Number | FDP050AN06A0 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 80A TO-220AB |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FDP050AN06A0
ONSEMICON
22800
0.34
HK HEQING ELECTRONICS LIMITED
FDP050AN06A0
ON/ST
8500
1.8175
SUMMER TECH(HK) LIMITED
FDP050AN06A0
ON/CMD
5000
3.295
Redstar Electronic Limited
FDP050AN06A0
ON/SANYO
29758
4.7725
Yingxinyuan INT'L (Group) Limited
FDP050AN06A0
ONSEM
458600
6.25
Shenzhen WTX Capacitor Co., Ltd.
