Part Number | FDP047N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 120A TO-220 |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15265pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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FDP047N10
ONSEMICON
14157
1.51
HK HEQING ELECTRONICS LIMITED
FDP047N10
ON/ST
150
2.5725
Dan-Mar Components Inc.
FDP047N10
ON/CMD
200000
3.635
Shenzhen WTX Capacitor Co., Ltd.
FDP047N10
ON/SANYO
1050
4.6975
Yingxinyuan INT'L (Group) Limited
FDP047N10
ONSEM
300
5.76
WIN AND WIN ELECTRONICS LIMITED