(5/5) based on 6 customer reviews
Description
DATASHEET FDP047AN08A0 . FDH047AN08A0. Symbol. Parameter. MOSFET Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. VDSS. Drain to Jul 12, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP047AN08A0 . FDP047AN08A0 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 8, 2016 FDP047AN08A0 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. FSSZ. 2.030183. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Jun 25, 2014 performed for FDP047AN08A0 and FDP032N08 in TO220 and FQPF13N50CF and FDPF20N50 in TO220F. These products were selected as RTN. OUTF. OUTE. DCM. DCM. S1. 11.5. V2. OUTF. VQ3. C4. 6.8n IC=0. R13. 18.2k. Q7. FDP047AN08A0 . Q8. FDP047AN08A0 . Q2. Q1. 12. V1. Vref. 20p IC=0.
| Part Number | FDP047AN08A0 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 75V 80A TO-220AB |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FDP047AN08A0
ONSEMICON
180
0.19
SUNTOP SEMICONDUCTOR CO., LIMITED
FDP047AN08A0
ON/ST
30000
1.5025
QUARKTWIN TECHNOLOGY LIMITED
FDP047AN08A0
ON/CMD
1934
2.815
LANTEK INT'L TRADE LIMITED
FDP047AN08A0
ON/SANYO
50
4.1275
Pacific Corporation
FDP047AN08A0
ONSEM
5500
5.44
AAC Technology Co., Limited
