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Description
FDP020N06B : N-Channel PowerTrench MOSFET 60V, 313A, 2m . For complete documentation, see the data sheet. This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching www.fairchildsemi.com. Rev. 1.0.1 3/12/13. 10. Table 4. PowerTrench MOSFETs Available. Part Number BVDSS. RDS(ON) Max at. VGS = 10 V. Qg Typ . at. VGS = 5 V. ID (A), TC = 25 C. (Silicon Limited). Qrr Typ. at. diF/dt=100 A/ s. Package. FDMS015N04B. 40 V. 1.5 m . 87 nC. 100 A. 90 nC. Power56. FDP020N06B .
| Part Number | FDP020N06B |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 120A TO-220-3 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 268nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 20930pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FDP020N06B
ONSEMICON
28800
0.91
HK HEQING ELECTRONICS LIMITED
FDP020N06B
ON/ST
200
1.7975
Dan-Mar Components Inc.
FDP020N06B
ON/CMD
1000
2.685
HK FEILIDI ELECTRONIC CO., LIMITED
FDP020N06B
ON/SANYO
43700
3.5725
Innovation Best Electronics Technology Limited
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ONSEM
3000
4.46
Shenzhen Qiangneng Electronics Co., Ltd.
