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Description
2009 Fairchild Semiconductor Corporation. FDN361BN Rev A1(W) www. fairchildsemi.com. FDN361BN . 30V N-Channel, Logic Level, PowerTrench. MOSFET. Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDN361BN . FDN361BN . SSOT-3. (EutecticAuBW-G). FDN361BN . SSOT-3 (EutecticAuBW-G). FSCP. FSCP. 0.01057. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . PMV65XP. FDN339AN. PMV30UN. FDN340P. PMV65XP. FDN342P. PMV65XP. FDN357N. PMV60EN. FDN359BN. PMV45EN. FDN361BN . BSH108. FDT3612. Fdn361Bn n. 30 single. 0.11. 0.16. . . . 1.3. 1.4. 0.5. ssOt-3. Fdn359Bn n. 30 single. 0.046. 0.06. . . . 5. 2.7. 0.5. ssOt-3. Fdn357n n. 30 single. 0.06. 0.09. .
| Part Number | FDN361BN |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 1.4A SSOT3 |
| Series | PowerTrench |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 193pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
FDN361BN
ONSEMICON
30000
1.1
Rs (Int'l) Electronics Limited
FDN361BN
ON/ST
35800
1.5625
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDN361BN
ON/CMD
389600
2.025
Shenzhen WTX Capacitor Co., Ltd.
FDN361BN
ON/SANYO
9000
2.4875
SUMMER TECH(HK) LIMITED
FDN361BN_NL
ONSEM
41100
2.95
CIS Ltd (CHECK IC SOLUTION LIMITED)
