Description
Datasheet Sep 26, 2014 Unit Type. FDMS8680 . FDMS8680 . PQFN-8. (TFSnCuAlBW).csv. FSCP. 0.105956 g. Each. Manufacturing Process Information. Terminal Finish. FDMS8680 . Q2. FDMS8670AS. 4. 5. 1 - 3. Q3. FDMS8670AS. L1. 0.45uH. C7. 5x330uF. C8. 12x22uF. C5. C6. 4x10uF. /25V. 0.1uF. /50V. R4. 0. R3. 0. R2. 1k. CSD16404Q5A. P. FDMS8672S. CSD16404Q5A. P. FDMS8674. CSD16404Q5A . P. FDMS8680 . CSD16410Q5A. P. FDMS8690. CSD16410Q5A. P. FDMS8692. the FDMS8680 , which seems to contradict the example shown in Figure 30. What should be noted here is that random selection of MOSFETs can yield. 1.1 V. 18 A. VOUT_GND. EN. V5IN. 4.5 V to. 6.5 V. R5. 30 k . R2. 10 k . UDG- 09068. R4(A). 470 k . Q2. FDMS8670AS. Q1. FDMS8680 . Q3. FDMS8670AS. R7.
Part Number | FDMS8680 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 14A POWER56 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1590pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image |
FDMS8680
ONSEMICON
6576
0.65
Norric Electronics (HK) Limited
FDMS8680
ON/ST
9000
1.485
SUMMER TECH(HK) LIMITED
FDMS8680
ON/CMD
1929
2.32
Yingxinyuan INT'L (Group) Limited
FDMS8680
ON/SANYO
88933
3.155
Cicotex Electronics (HK) Limited
FDMS8680
ONSEM
11275
3.99
Ande Electronics Co., Limited