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Description
DATASHEET Jul 7, 2016 FDMS86202 . PQFN-8. (BWAu_S_G_clip). Jul 07, 2016. 1.0. FSCP. 0.122147 g. Each. Manufacturing Process Information. Terminal Finish. Jul 7, 2016 FDMS86202 . PQFN-8 (BWAu_S_G_clip). FSCP. FSCP. 0.122147. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. 4.85m . 120V FDMS86202 . 7.2m . 150V FDMS86255. 12.4m . Fairchilds complete portfolio for primary side, secondary side and non-isolated DC-DC FDMS86202 . MOSFET N-ch 120V 64A. 7.2mOhm Power-56 SMT. Fairchild. FDMS86202 . 1 Q3. FDMS86101. MOSFET N-CH 100V. 8mOhm Power-56 SMT.
| Part Number | FDMS86202 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 120V 8MLP |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250pF @ 60V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 13.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Power56 |
| Package / Case | 8-PowerTDFN |
| Image |  |
FDMS86202
ONSEMICON
3000
0.39
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS86202
ON/ST
35800
1.355
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDMS86202
ON/CMD
6000
2.32
ZY (HK) TECHNOLOGY LIMITED
FDMS86202
ON/SANYO
5000000
3.285
Hongkong Shengshi Electronics Limited
FDMS86202
ONSEM
5200
4.25
FLOWER GROUP(HK)CO.,LTD
