Description
FDMS86183 : N-Channel Shielded Gate PowerTrench MOSFET100 V, 51 A, 12.8. m . For complete documentation, see the data sheet. This N-Channel MV Jan 13, 2017 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS86183 . PQFN-8 5X6 (TFSnCu_AlNiBW). FSCP.
Part Number | FDMS86183 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 51A 8PQFN |
Series | PowerTrench |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 6V |
Input Capacitance (Ciss) (Max) @ Vds | 1515pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 12.8 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image |
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