Description
Datasheet Dec 1, 2012 Thermal Resistance, Junction to Case. 3.5. 2. Device Marking. Device. Package. Reel Size. Tape Width. Quantity. 22CA. N9CC. FDMS3606S . Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FDMS3606S . FDMS3606S . Power- 56 8L 5x6 w S&G clip. Dual Die. INTERNAL CEBU. 0.121565. Aug 8, 2014 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS3606S . Power-56 8L 5x6 w S&G clip Dual Die.
Part Number | FDMS3606S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 30V 13A/27A PWR56 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13A, 27A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1785pF @ 15V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Image |
FDMS3606S
ONSEMICON
3286
1.73
HK HEQING ELECTRONICS LIMITED
FDMS3606S
ON/ST
35800
2.745
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDMS3606S
ON/CMD
3000
3.76
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS3606S
ON/SANYO
9000
4.775
SUMMER TECH(HK) LIMITED
FDMS3606S
ONSEM
3000
5.79
HONG KONG HORNG SHING LIMITED