Description
Datasheet Aug 9, 2014 Version. Manufacturing Site. Weight*. UOM. Unit Type. FDMS0310S . FDMS0310S . 8-PQFN 5X6. (TFSnCuAlBW). INTERNAL CEBU. 0.105956. Aug 8, 2014 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS0310S . 8-PQFN 5X6. (TFSnCuAlBW). CEBU.
Part Number | FDMS0310S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 19A |
Series | PowerTrench, SyncFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2820pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image |
FDMS0310S
ONSEMICON
5000000
0.14
Hongkong Shengshi Electronics Limited
FDMS0310S
ON/ST
7000
1.4875
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
FDMS0310S
ON/CMD
47316
2.835
HK HEQING ELECTRONICS LIMITED
FDMS0310S
ON/SANYO
24166
4.1825
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDMS0310S
ONSEM
19605
5.53
Gallop Great Holdings (Hong Kong) Limited