Description
MOSFET 2N-CH 100V Series: PowerTrench? FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 10A Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) @ Vds: 2060pF @ 50V Power - Max: 2.2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6
Part Number | FDMD86100 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET 2N-CH 100V |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) Common Source |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 50V |
Power - Max | 2.2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-Power 5x6 |
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