Part Number | FDI3632 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 80A TO-262AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI3632
ONSEMICON
5475
1.18
MY Group (Asia) Limited
FDI3632
ON/ST
4115
2.4375
HK HEQING ELECTRONICS LIMITED
FDI3632
ON/CMD
1323
3.695
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDI3632
ON/SANYO
2470
4.9525
Cicotex Electronics (HK) Limited
FDI3632
ONSEM
5243
6.21
SIC ELECTRONICS LIMITED