Part Number | FDI33N25TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 33A I2PAK |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2135pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 235W (Tc) |
Rds On (Max) @ Id, Vgs | 94 mOhm @ 16.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI33N25TU
ONSEMICON
6643
1.28
MY Group (Asia) Limited
FDI33N25TU
ON/ST
1383
1.895
Hongkong K.L.N Electronic Technology Co., Ltd.
FDI33N25TU
ON/CMD
7196
2.51
MY Group (Asia) Limited
FDI33N25TU
ON/SANYO
1712
3.125
MASSTOCK ELECTRONICS LIMITED
FDI33N25TU
ONSEM
6433
3.74
Finestock Electronics HK Limited