Part Number | FDI150N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 57A I2PAK |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4760pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 49A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI150N10
ONSEMICON
7146
0.25
Finestock Electronics HK Limited
FDI150N10
ON/ST
2505
1.405
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDI150N10
ON/CMD
5844
2.56
N&S Electronic Co., Limited
FDI150N10
ON/SANYO
9637
3.715
Ande Electronics Co., Limited
FDI150N10
ONSEM
760
4.87
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED