Part Number | FDI047AN08A0 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 75V 80A TO-262AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI047AN08A0
ONSEMICON
4848
1.51
MY Group (Asia) Limited
FDI047AN08A0
ON/ST
7851
2.6175
Shenzhen Lichengda Technology Co.,LIMITED
FDI047AN08A0
ON/CMD
4346
3.725
Shenzhen Dacheng Communication Co., Ltd
FDI047AN08A0
ON/SANYO
207
4.8325
SOUTHCHIP LIMITED
FDI047AN08A0
ONSEM
1513
5.94
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED