Part Number | FDI045N10A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 120A I2PAK-3 |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5270pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 263W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI045N10A
ONSEMICON
6027
0.1
Shenzhen Qiangneng Electronics Co., Ltd.
FDI045N10A
ON/ST
8337
1.09
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDI045N10A
ON/CMD
722
2.08
HK ALL-WIN TECHNOLOGY LIMITED
FDI045N10A
ON/SANYO
7677
3.07
Yingxinyuan INT'L (Group) Limited
FDI045N10A
ONSEM
9116
4.06
HK TWO L ELECTRONIC LIMITED