Part Number | FDI030N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 120A I2PAK |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 151nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9815pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 231W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FDI030N06
ONSEMICON
35800
1.08
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDI030N06
ON/ST
3000
1.8125
Shenzhen Qiangneng Electronics Co., Ltd.
FDI030N06 MOS()
ON/CMD
2700
2.545
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDI030N06
ON/SANYO
1630
3.2775
RX ELECTRONICS LIMITED
FDI030N06
ONSEM
14007
4.01
Yingxinyuan INT'L (Group) Limited