Description
28.00. 8000. TO-3PN. FDA28N50F. 500. 0.175. 80.0. 28.00. 1380. TO-3PN. FDH44N50. 500. 0.120. 90.0. 44.00. 14000. TO-247. FDH45N50F . 500. 0.120. 105.0. Nov 23, 2005 Reverse Recovery Waveforms. Test Conditions: Vr = 20V, If = 10A, di/dt = 160A/ usec & TJ = 25 C. FDH45N50F . FQA28N50F. IRF32N50K. Nov 5, 2009 FDH45N50F . 500. 0.120. 105. 45.00. 640. TO-247. FQPF8N60CF. 600. 1.500. 28 . 6.26. 242. TO-220F. FQP10N60CF. 600. 0.800. 44. 9.00. 300.
Part Number | FDH45N50F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 45A TO-247 |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 137nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6630pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 22.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
FDH45N50F
ONSEMICON
12000
1.33
MeiChuangXinKe (SZ) Electronics Co., Ltd.
FDH45N50F
ON/ST
3000
1.9925
Shenzhen Qiangneng Electronics Co., Ltd.
FDH45N50F_F133
ON/CMD
30000
2.655
Ysx Tech Co., Limited
FDH45N50F
ON/SANYO
554
3.3175
WIN AND WIN ELECTRONICS LIMITED
FDH45N50F
ONSEM
45
3.98
Yingxinyuan INT'L (Group) Limited