Description
Nov 1, 2013 November 2013. FDB15N50. N-Channel UniFET. TM. MOSFET. 2003 Fairchild Semiconductor Corporation. FDB15N50 Rev. C1. Oct 31, 2003 FQA19N60, FDH15N50 ,. Power Level. P/Ns for frequency < 75 kHz. 75_100W. FGH20N6S2D,HGTG7N60A4D. 100_400W. FGH30N6S2D, Apr 3, 2009 FDH15N50 . 500. 0.380. 33.0. 15.00. 5000. TO-247. FDP16N50. 500. 0.390. 32.0. 16.00. 5000. TO-220. FDPF16N50T. 500. 0.380. 32.0. 16.00.
Part Number | FDH15N50 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 15A TO-247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 7.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
FDH15N50
ONSEMICON
16000
1.79
Finestock Electronics HK Limited
FDH15N50
ON/ST
5360
2.8775
HK HEQING ELECTRONICS LIMITED
FDH15N50
ON/CMD
1011
3.965
N&S Electronic Co., Limited
FDH15N50
ON/SANYO
1000
5.0525
MY Group (Asia) Limited
FDH15N50
ONSEM
200
6.14
Yingxinyuan INT'L (Group) Limited