Description
Jul 7, 2016 FDFMA2P857 . MLP-6 (2.0X2.0). (CuBW) (H). Jul 07, 2016. 1.0. HANA. 0.00944 g . Each. Manufacturing Process Information. Terminal Finish. Fairchild Semiconductor FDFMA2P857 . Note 1: The components listed in this Bill of Materials are representative of the PCB assembly. The released BOM. FDFMA2P857 . ON_OFF. TX. M. RX. M. VCC. GND. GND. GND. GND. GND. GND. GPIO. A. GPIO. B. GPIO. C. 1PPS. RFPWRUP. GPIO. D. GPIO. E. C1. 18pF. R4. FDFMA2P029Z, FDFMA2P853, FDFMA2P857 ,. FDFMA3N109, FDMA1023PZ, FDMA1024NZ,. FDMA1025P, FDMA1027P, FDMA1028NZ,. FDMA1028NZ_F021 PD. (W). 10V. 4.5V. 2.5V. 1.8V. 1.5V. (nC). @ VGS (V). VF (V). @ IF (A). FdFma2P029Z. -20. 3.1. . 0.095. 0.141. . . 7. 4.5. 0.37. 0.5. 1.4. FdFMa2P857 . -20. 2.2.
Part Number | FDFMA2P857 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 20V 3A MICROFET2X2 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.4W (Ta) |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-MicroFET (2x2) |
Package / Case | 6-VDFN Exposed Pad |
Image |
FDFMA2P857
ONSEMICON
150667
0.8
IC Chip Co., Ltd.
FDFMA2P857
ON/ST
35800
1.4625
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDFMA2P857
ON/CMD
16000
2.125
Finestock Electronics HK Limited
FDFMA2P857
ON/SANYO
10000
2.7875
KK Wisdom Limited
FDFMA2P857
ONSEM
29604
3.45
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED