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Description
DATASHEET Jan 8, 2016 FDD8874 . TO252-3. (NiLFAlBW). Jan 08, 2016. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDD8874 . TO252- 3 Dec 19, 2012 DEMO CIRCUIT1997A. E28. R57. 0.005. 2010. R57. 0.005. 2010. J7. 1. 2345. Q4 . OPT. Q4. OPT. 2. 4. 5. 3. 1. Q12. FDD8874 . Q12. FDD8874 . FAIRCHILD FDD8874 . 10. 0. Q3-Q10. MOSFET LFPAK. OPT. 11. 0. R1, R3, R8, R9, R10, R15, R16, R18,. R20, R22, R26, R28, R33, R34, R36,. R37, R39, R43
| Part Number | FDD8874 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 116A D-PAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 116A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2990pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
FDD8874
ONSEMICON
18126
0.15
HK HEQING ELECTRONICS LIMITED
FDD8874
ON/ST
50000
1.295
LANTEK INT'L TRADE LIMITED
FDD8874
ON/CMD
9000
2.44
SUMMER TECH(HK) LIMITED
FDD8874
ON/SANYO
37640
3.585
ATLANTIC TECHNOLOGY LIMITED
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20000
4.73
Belt (HK) Electronics Co
