Part Number | FDD86113LZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 4.2A DPAK-3 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 285pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 29W (Tc) |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 4.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD86113LZ
ONSEMICON
25675
0.86
HK HEQING ELECTRONICS LIMITED
FDD86113LZ
ON/ST
3000
1.5625
Shenzhen Qiangneng Electronics Co., Ltd.
FDD86113LZ
ON/CMD
1498
2.265
Dan-Mar Components Inc.
FDD86113LZ
ON/SANYO
23398
2.9675
Yingxinyuan INT'L (Group) Limited
FDD86113LZ
ONSEM
284
3.67
WIN AND WIN ELECTRONICS LIMITED