Part Number | FDD850N10L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 15.7A DPAK-3 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 15.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1465pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD850N10L
ONSEMICON
5000000
1.07
Hongkong Shengshi Electronics Limited
FDD850N10L
ON/ST
25000
1.99
HK HEQING ELECTRONICS LIMITED
FDD850N10L
ON/CMD
20559
2.91
Cicotex Electronics (HK) Limited
FDD850N10L
ON/SANYO
100
3.83
F-power Electronics Co
FDD850N10L
ONSEM
54530
4.75
Gallop Great Holdings (Hong Kong) Limited