Part Number | FDD6N50TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 6A DPAK |
Series | UniFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 89W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD6N50TM
ONSEMICON
5724
0.58
HK HEQING ELECTRONICS LIMITED
FDD6N50TM_F085
ON/ST
5000000
1.72
Hongkong Shengshi Electronics Limited
FDD6N50TM
ON/CMD
35800
2.86
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDD6N50TM
ON/SANYO
9000
4
SUMMER TECH(HK) LIMITED
FDD6N50TM
ONSEM
40178
5.14
ShenZhen hengjiaWei Electronic Co,.Ltd.