Description
FDD6688 /FDU6688. 30V N-Channel PowerTrench. . MOSFET. General Description. This N-Channel MOSFET has been designed specifically to improve the Sep 26, 2014 FDD6688 . FDD6688 . TO252-3. (DPAK_GEM).csv. GEM. 0.329837 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Sep 26, 2014 FDD6688 . TO252-3 (DPAK_GEM).csv. GEM. GEM. 0.329837. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp.
Part Number | FDD6688 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 30V 84A D-PAK |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 84A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3845pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Ta) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD6688
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