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Description
DATASHEET Dec 31, 2010 application, a FET with VGS(TH)=2V, such as FDD6672A from. Fairchild, is needed. Layout Guidelines. Careful attentions to layout Qg (nC). (TYP). FOOTPRINT. FDC633N. 30. 0.67. 42. 1.19. 11. Super. SOT-6. FDP8030L. FDB8030L. 30. 1.5. 4.5. 11.11. 120. TO-220. TO-263AB. FDD6672A . Qg (typ). (nC). PACKAGE. FDC633N. 30. 0.67. 42. 1.19. 11. Super SOT-6. FDP8030L. FDB8030L. 30. 1.5. 4.5. 11.11. 120. TO-220. TO-263AB. FDD6672A . 30. Qg (nC). (TYP). FOOTPRINT. FDC633N. 30. 0.67. 42. 1.19. 11. Super. SOT-6. FDP8030L. FDB8030L. 30. 1.5. 4.5. 11.11. 120. TO-220. TO-263AB. FDD6672A . Qg (typ). (nC). PACKAGE. FDC633N. 30. 0.67. 42. 1.19. 11. Super SOT-6. FDP8030L. FDB8030L. 30. 1.5. 4.5. 11.11. 120. TO-220. TO-263AB. FDD6672A . 30.
| Part Number | FDD6672A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 65A D-PAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 70W (Tc) |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 14A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
FDD6672A
ONSEMICON
10000
0.45
Hong Kong Capital Industrial Co.,Ltd
FDD6672A
ON/ST
20000
1.795
Yingxinyuan INT'L (Group) Limited
FDD6672A
ON/CMD
200
3.14
FLOWER GROUP(HK)CO.,LTD
FDD6672A
ON/SANYO
4000
4.485
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDD6672A
ONSEM
10000
5.83
KK Wisdom Limited
