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Description
Aug 9, 2014 FDD6630A . TO-252-3 (NiLFAlBW). INTERNAL SUZHOU. 0.291830 g. Each. Terminal Finish. Base Alloy. J-STD-020 MSL Rating. Peak Process Aug 8, 2014 FDD6630A . TO-252-3. (NiLFAlBW). SUZHOU. INTERNAL. SUZHOU. 0.2918300. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. ISSUE NO. 01. JAN 2015 www.taiwansemi.com. NEW PRODUCT. ANNOUNCEMENT. TSC. Fairchild. IR. TSM500N03CP. FDD6630A . IRLR2703PBF. Ordering. Dual n-channel MOSFET, 30V, 18m . (max), SO-8. Vishay Si4922DY. N2. 0 n- channel MOSFET, 30V, 50m . (max), DPAK. Fairchild Semiconductor FDD6630A . (D-PAK). International Rectifier IRFR9N20D. N2. 1. 30V, 21A n-channel MOSFET . (D-PAK). Fairchild FDD6630A . N3. 1. 20V, 37A n-channel MOSFET. (D-PAK).
| Part Number | FDD6630A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 21A D-PAK |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 462pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Ta) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 7.6A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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