Description
MOSFET N/P-CH 80V 4.3A/2.8A DPAK Series: PowerTrench? FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25~C: 4.3A, 2.8A Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) @ Vds: 800pF @ 40V Power - Max: 1.3W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L
Part Number | FDD3510H |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET N/P-CH 80V 4.3A/2.8A DPAK |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel, Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 4.3A, 2.8A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 40V |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package | TO-252-4L |
Image |
FDD3510H
ONSEMICON
77500
1.24
HK HEQING ELECTRONICS LIMITED
FDD3510H
ON/ST
3000
2.0675
KK Wisdom Limited
FDD3510H
ON/CMD
10000
2.895
HONG KONG HORNG SHING LIMITED
FDD3510H
ON/SANYO
110
3.7225
WIN AND WIN ELECTRONICS LIMITED
FDD3510H
ONSEM
1240
4.55
Nosin (HK) Electronics Co.