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Description
FDC638APZ /D. 1. FDC638APZ . P-Channel 2.5V PowerTrench. . Specified MOSFET. 20V, 4.5A, 43m . Features. Max rDS(on) = 43m at VGS = 4.5V, FDC638APZ : -20V P-Channel 2.5V PowerTrench Specified MOSFET. For complete documentation, see the data sheet. This P-Channel 2.5V specified The 900844 is a high efficiency Power Management Integrated Circuit. (PMIC) capable of providing operating voltages for Ultra-mobile platforms for Netbook FDC638APZ . G. D. S. Q2. FDC638APZ . 4. 3. 1. 2. 5. 6. R16. 0. R16. 0. R2. 47K. R2. 47K. X1. FC-255_32.768KHz. X1. FC-255_32.768KHz. R23. 1K. R23. 1K.
| Part Number | FDC638APZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET P-CH 20V 4.5A SSOT-6 |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 4.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT,6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image |  |
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