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Description
MOSFET N/P-CH 25V SSOT-6 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25~C: 220mA, 460mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) @ Vds: 9.5pF @ 10V Power - Max: 700mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-SSOT
Part Number | FDC6322C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ON Semiconductor |
Description | MOSFET N/P-CH 25V SSOT-6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 220mA, 460mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT,6 |
Image | ![]() |
FDC6322C
ONSEMICON
1287
1.75
WALTON ELECTRONICS CO., LIMITED
FDC6322C
ON/ST
3000
2.5225
Hong Kong Capital Industrial Co.,Ltd
FDC6322C
ON/CMD
5000000
3.295
Hongkong Shengshi Electronics Limited
FDC6322C
ON/SANYO
3000
4.0675
KK Wisdom Limited
FDC6322C
ONSEM
82482
4.84
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED