Description
Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDBL0150N80 . IP & Fab Processes. 55 nm, analog-focused CMOS/BCDMOS process technologies utilizing internal fabs and external foundry partners. Low, medium, high
Part Number | FDBL0150N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 80V 300A |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 188nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12800pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 429W (Tj) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PSOF |
Package / Case | 8-PowerSFN |
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