Part Number | FDB86363_F085 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 80V 110A TO263 |
Series | Automotive, AEC-Q101, PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB86363
ONSEMICON
6875
0.56
Viassion Technology Co., Limited
FDB86363
ON/ST
687
1.185
N&S Electronic Co., Limited
FDB86363_F085
ON/CMD
9285
1.81
Ande Electronics Co., Limited
FDB86363
ON/SANYO
5348
2.435
Yingxinyuan INT'L (Group) Limited
FDB86363**
ONSEM
5427
3.06
N&S Electronic Co., Limited