Part Number | FDB5690 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 32A TO-263AB |
Series | PowerTrench |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 58W (Tc) |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 16A, 10V |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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FDB5690
ONSEMICON
800
0.54
HK HEQING ELECTRONICS LIMITED
FDB5690
ON/ST
16000
1.525
Finestock Electronics HK Limited
FDB5690
ON/CMD
1800
2.51
Gallop Great Holdings (Hong Kong) Limited
FDB5690
ON/SANYO
241067
3.495
TERNARY UNION CO., LIMITED
FDB5690
ONSEM
2300
4.48
Cicotex Electronics (HK) Limited