Part Number | FDB28N30TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 300V 28A D2PAK |
Series | UniFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 129 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB28N30TM
ONSEMICON
32400
0.32
HK HEQING ELECTRONICS LIMITED
FDB28N30TM
ON/ST
3000
1.2625
Shenzhen Qiangneng Electronics Co., Ltd.
FDB28N30TM
ON/CMD
10000
2.205
HONG KONG HORNG SHING LIMITED
FDB28N30TM
ON/SANYO
184
3.1475
WIN AND WIN ELECTRONICS LIMITED
FDB28N30TM
ONSEM
9000
4.09
Nosin (HK) Electronics Co.