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Description
Jul 11, 2016 FDB2552 . TO263-2. (NiLFAlBW). Jul 11, 2016. 1.0. FSSZ. 1.485898 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jan 13, 2017 FDB2552 . TO263-2 (NiLFAlBW). FSSZ. FSSZ. 1.485898. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. 65. 105. 231 to-263 (d2PAK). FdB110N15A. 150. 0.011. 47. 92. 234 to-263 ( d2PAK). FdB2532. 150. 0.016. 82. 79. 310 to-263 (d2PAK). FdB2552 . 150. 0.036. 39. Page 1. Recommendations for Assembly of Infineon TO Packages. Additional Information. DS1, March 2008. Page 2. Edition 2008-03. Published by. Page 1. Page 2. Soldering and Mounting Techniques. SOLDERRM/D. Rev. 11, March 2016. Reference Manual. SCILLC, 2016. Previous Edition, 2015.
| Part Number | FDB2552 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 150V 37A TO-263AB |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 16A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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