Part Number | FDB150N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 57A D2PAK |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4760pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 49A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB150N10
ONSEMICON
3653
0.65
HK HEQING ELECTRONICS LIMITED
FDB150N10
ON/ST
2620
1.62
Shenzhen Qiangneng Electronics Co., Ltd.
FDB150N10
ON/CMD
6892
2.59
SUMMER TECH(HK) LIMITED
FDB150N10
ON/SANYO
2318
3.56
Yingxinyuan INT'L (Group) Limited
FDB150N10
ONSEM
5546
4.53
WIN AND WIN ELECTRONICS LIMITED