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Description
DATASHEET May 1, 2014 G. S. D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDA032N08 . Unit. VDSS. Jun 29, 2016 FDA032N08 . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Jan 8, 2016 Unit Type. FDA032N08 . FDA032N08 . TO3PN-3. Jan 08, 2016. 1.0. FSSZ. 5.43465 g. Each. Manufacturing Process Information. Terminal Finish. Fda032n08 . 75. 20. 3.2. 169. 47. tO-3Pn. Fdb031n08. 75. 20. 3.1. 169. 47. d2Pak. Fdb088n08. 75. 20. 8.8. 91. 28. d2Pak. FdP032n08. 75. 20. 3.2. 169. 47.
| Part Number | FDA032N08 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 75V 120A TO-3P |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 15160pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Image |  |
FDA032N08
ONSEMICON
15097
0.68
HK HEQING ELECTRONICS LIMITED
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ON/ST
5000
1.805
Ysx Tech Co., Limited
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3000
2.93
Shenzhen Qiangneng Electronics Co., Ltd.
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9700
4.055
CIS Ltd (CHECK IC SOLUTION LIMITED)
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Yingxinyuan INT'L (Group) Limited
