Part Number | FCU850N80Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 6A IPAK |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1315pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FCU850N80Z
ONSEMICON
579
0.54
EASYIEE TECHNOLOGY LIMITED
FCU850N80Z
ON/ST
48500
1.66
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FCU850N80Z
ON/CMD
14000
2.78
MY Group (Asia) Limited
FCU850N80Z
ON/SANYO
12850
3.9
Ande Electronics Co., Limited
FCU850N80Z
ONSEM
15
5.02
Cicotex Electronics (HK) Limited