Part Number | FCPF190N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V TO-220-3 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3175pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 |
Package / Case | TO-220-3 Full Pack |
Image |
FCPF190N60E
ONSEMICON
5951
1.47
Shenzhen Qiangneng Electronics Co., Ltd.
FCPF190N60E
ON/ST
1915
2.0975
CRYSTALTEK CO., LIMITED
FCPF190N60E
ON/CMD
342
2.725
Riking Technology (HK) Co., Limited
FCPF190N60E
ON/SANYO
8352
3.3525
Yues Limited
FCPF190N60E
ONSEM
8481
3.98
AAC Technology Co., Limited