(4/5) based on 6 customer reviews
Description
Datasheet Nov 1, 2013 FCP22N60N / FCPF22N60NT. N-Channel SupreMOS. . MOSFET. 600 V, 22 A, 165 m . Features. BVDSS > 650 V @ TJ = 150oC. RDS(on) Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCP22N60N . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Oct 22, 2015 FCP22N60N . TO220-3 (92.5-5-. 2.5DA_AlBW). Oct 22, 2015. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. VDD. FODM8071. Output. CCM PFC. FAN6982. AC Input. PowerTrench . FDP032N08. SupreMOS . FCP22N60N . VDD. VDD optically isolating digital control.
| Part Number | FCP22N60N |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 600V 22A TO-220 |
| Series | SupreMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
| Vgs (Max) | ±45V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FCP22N60N
ONSEMICON
30000
1.19
Superior Electronics Limited
FCP22N60N
ON/ST
20000
2.4925
Redstar Electronic Limited
FCP22N60N
ON/CMD
141
3.795
WIN AND WIN ELECTRONICS LIMITED
FCP22N60N**
ON/SANYO
39860
5.0975
Ande Electronics Co., Limited
FCP22N60N
ONSEM
10500
6.4
Cicotex Electronics (HK) Limited
