Part Number | FCP220N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 23A |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 2.3mA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4560pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 11.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
FCP220N80
ONSEMICON
531
1.44
Shenzhen Qiangneng Electronics Co., Ltd.
FCP220N80
ON/ST
2705
2.545
MY Group (Asia) Limited
FCP220N80
ON/CMD
4780
3.65
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
FCP220N80
ON/SANYO
4322
4.755
HEXING TECHNOLOGY (HK) LIMITED
FCP220N80
ONSEM
2626
5.86
Shenzhen Tongxin Win-Win Technology Co., Ltd