Part Number | FCP190N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V TO220-3 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3175pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
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FCP190N60E
ONSEMICON
5590
1.63
RX ELECTRONICS LIMITED
FCP190N60E
ON/ST
9804
2.0775
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FCP190N60E
ON/CMD
5759
2.525
Superior Electronics Limited
FCP190N60E
ON/SANYO
3861
2.9725
Jiayu Electronic (HK) Limited
FCP190N60E
ONSEM
6486
3.42
VBsemi Electronics Co., Limited