Part Number | FCP165N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 23A TO220 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2434pF @ 380V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 227W (Tc) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 11.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
FCP165N60E
ONSEMICON
3000
1.27
Shenzhen Qiangneng Electronics Co., Ltd.
FCP165N60E
ON/ST
6199
2.195
MASSTOCK ELECTRONICS LIMITED
FCP165N60E
ON/CMD
12648
3.12
CIS Ltd (CHECK IC SOLUTION LIMITED)
FCP165N60E
ON/SANYO
14000
4.045
MY Group (Asia) Limited
FCP165N60E
ONSEM
20
4.97
Yingxinyuan INT'L (Group) Limited