Part Number | FCP11N60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 10.8A TO220 |
Series | SupreMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1505pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 5.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FCP11N60N
ONSEMICON
4391
0.87
Cinty Int'l (HK) Industry Co., Limited
FCP11N60N
ON/ST
6130
2.065
Yingxinyuan INT'L (Group) Limited
FCP11N60N**
ON/CMD
8893
3.26
Ande Electronics Co., Limited
FCP11N60N
ON/SANYO
8227
4.455
N&S Electronic Co., Limited
FCP11N60N
ONSEM
1587
5.65
CIS Ltd (CHECK IC SOLUTION LIMITED)